Semiconductor device and method of increasing channel length to eliminate short channel effects of corner devices
US6365947B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 27, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Apr 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/235
Abstract
A method of increasing the channel length for small semiconductor devices having decreased gate dimensions, thus reducing or eliminating short channel effects for corner devices. The method generally includes forming a gate electrode and defining first and second active areas both adjacent to the gate electrode, which in turn creates a first corner and a second corner. The geometrical shape and position of the first and second active areas with respect to the gate electrode increase the channel length to be longer the gate electrode length. For example, the first corner is positioned offset with respect to the second corner relative to the gate electrode and the carrier channel is a linear segment connecting the first corner to the second corner. In another embodiment, the carrier channel includes multiple segments. The increased channel length reduces or eliminates short channeling effects without affecting the threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.