Patent · US Expired

Method for identifying and controlling impact of ambient conditions on photolithography processes

US6368883B1 · kind B1 · utility

60Cited by
7References
33Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 10, 1999
Grant dateApr 9, 2002
Priority date
Expiry dateAug 10, 2019

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/26
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The invention is, in its various aspects, a method and apparatus for processing a semiconductor wafer. More particularly, the invention is a method and apparatus for identifying and controlling the impact of ambient conditions on photolithography processes. In a first aspect, the invention is a method for processing a semiconductor wafer. The method comprises identifying a disturbance in a photolithographic process arising from an ambient condition; modeling the identified disturbance; and applying the model to modify a control input parameter. In a second aspect, the invention is an apparatus for controlling a photolithography process. The apparatus includes an exposure tool, including a photolithography controller; and a computer receiving data from the exposure tool. The computer is programmed to perform a method comprising: identifying a disturbance in a photolithographic process arising from an ambient condition; modeling the identified disturbance; and applying the model to modify a control input parameter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.