Method of manufacturing a semiconductor component and semiconductor component thereof
US6368929B1 · kind B1 · utility
10Cited by
15References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2000 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Aug 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A method of manufacturing a semiconductor component and the component thereof includes forming a dielectric layer (620) over a portion of a passivation ledge (640) in an emitter layer (280) and overlapping a base contact (660) onto the dielectric layer (620).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.