Patent · US Expired

Method of manufacturing a semiconductor component and semiconductor component thereof

US6368929B1 · kind B1 · utility

10Cited by
15References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 17, 2000
Grant dateApr 9, 2002
Priority date
Expiry dateAug 17, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/85

Abstract

A method of manufacturing a semiconductor component and the component thereof includes forming a dielectric layer (620) over a portion of a passivation ledge (640) in an emitter layer (280) and overlapping a base contact (660) onto the dielectric layer (620).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.