Method for reducing resistance in a conductor
US6368964B1 · kind B1 · utility
1Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2000 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Dec 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76886
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of reducing resistance in an Al-containing conductor. An Al oxide layer is first formed on the surface of an Al-containing conductor followed by the formation of a Ti layer and a barrier layer above the Al oxide layer, respectively. Finally, a W contact plug is formed within the barrier layer. The Al oxide layer functions in preventing a reaction between the Ti layer and the conductor during high temperature formation of the W contact plugs to avoid the influence of resistance in the Al-containing conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.