Use of selective ozone TEOS oxide to create variable thickness layers and spacers
US6368986B1 · kind B1 · utility
8Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for selectively depositing a silicon oxide layer onto silicon substrates of different conductivity types is disclosed. The silicon oxide layer is formed by the ozone decomposition of TEOS at relatively low temperatures and relatively high pressures. Use of the process to produce layers, spacers, memory units, and gates is also disclosed, as well as the structures so produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.