William Budge
21Patents
5h-index
7Co-inventors
54Inventor score
Filing activity: Mar 27, 2000 → Aug 28, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7271463B2 | Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base | Electricity | 15 | Expired |
| US6982207B2 | Methods for filling high aspect ratio trenches in semiconductor layers | Electricity | 10 | Expired |
| US6368986B1 | Use of selective ozone TEOS oxide to create variable thickness layers and spacers | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6617230B2 | Use of selective ozone teos oxide to create variable thickness layers and spacers | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6503851B2 | Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off | Electricity | 5 | Expired |
| US6602807B2 | Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off | Electricity | 5 | Expired |
| US7259079B2 | Methods for filling high aspect ratio trenches in semiconductor layers | Electricity | 4 | Expired |
| US7479440B2 | Method of forming an isolation structure that includes forming a silicon layer at a base of the recess | Electricity | 3 | Active |
| US7214979B2 | Selectively deposited silicon oxide layers on a silicon substrate | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7632737B2 | Protection in integrated circuits | Electricity | 2 | Active |
| US7219114B2 | Fast approximation to the spherical linear interpolation function | Physics | 2 | Expired |
| US7494894B2 | Protection in integrated circuits | Electricity | 2 | Expired |
| US7078356B2 | Low K interlevel dielectric layer fabrication methods | Electricity | 1 | Expired |
| US7056833B2 | Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition | Electricity | 1 | Expired |
| US7501691B2 | Trench insulation structures including an oxide liner and oxidation barrier | Electricity | 1 | Active |
| US7067415B2 | Low k interlevel dielectric layer fabrication methods | Electricity | 1 | Expired |
| US7273793B2 | Methods of filling gaps using high density plasma chemical vapor deposition | Electricity | 1 | Expired |
| US7192893B2 | Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off | Electricity | 0 | Expired |
| US7067414B1 | Low k interlevel dielectric layer fabrication methods | Electricity | 0 | Expired |
| US7202183B2 | Method of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition | Electricity | 0 | Expired |
| US7521354B2 | Low k interlevel dielectric layer fabrication methods | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.