Semiconductor device and method of manufacturing the same
US6369409B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1996 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Jul 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
Abstract
It is an object to provide a highly precise bleeder resistance circuit having an accurate voltage division ratio and a small temperature coefficient of the resistance value and a highly precise semiconductor device having a small temperature coefficient using such a bleeder resistance circuit, e.g., a semiconductor device such as a voltage detector and a voltage regulator. Such characteristic features that the potential of electric conductors on the thin film resistors and electric conductors under the thin film resistors of a bleeder resistance circuit using thin film resistors is made almost equal to the potential of respective thin film resistors and that, when polysilicon is used in the thin film resistor, the dispersion of the resistance value is controlled and the temperature dependency of the resistance value is made lower by thinning the film thickness of the polysilicon thin film resistor are constituted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.