Plasma processing apparatus with a dielectric plate having a thickness based on a wavelength of a microwave introduced into a process chamber through the dielectric plate
US6372084B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2001 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Mar 23, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/511
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus applies a high-quality process to an object to be processed by preventing impurities from being generated due to a microwave transmitting through a dielectric plate. The dielectric plate is provided between a process chamber of a plasma processing apparatus and a slot electrode guiding a microwave used for a plasma process. A thickness H of the dielectric plate has a predetermined relationship with a wavelength &lgr; of the microwave in the dielectric plate so that an amount of isolation of the dielectric plate due to transmission of the microwave is minimized. The wavelength &lgr; is represented by &lgr;=&lgr;0n, where &lgr;0 is a wavelength of the microwave in a vacuum and n is a wavelength reducing rate of the dielectric plate represented by n=1/(&egr;t)½, where &egr;t is a specific dielectric rate of the dielectric plate in a vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.