Barium strontium titanate integrated circuit capacitors and process for making the same
US6372286B1 · kind B1 · utility
21Cited by
2References
8Claims
0Family size
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Key dates
| Filing date | Jul 19, 1994 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Jul 19, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 2000 å. Typical gain sizes are 40 nanometers and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and an xylene exchange is preformed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 675° C. and 850° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.