Method of reducing post-development defects in and around openings formed in photoresist by use of multiple development/rinse cycles
US6372408B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 21, 2000 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Jun 21, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/3021
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable remnants (denoted as Blob Defects) of various components of photoresist material remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of using a Puddle Development technique to develop the photoresist material, and subsequently exposing the semiconductor wafer to at least one Puddle Rinse cycle which uses water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.