Method and arrangement for characterization of focused-ion-beam insulator deposition
US6372627B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1999 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Aug 26, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/311
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
According to one aspect of the disclosure and a particular example application directed to a flip-chip packaged die, a method for acquiring a signal from a target node in the circuit side includes removing substrate via the back side of the die to form an access area over the target node. A material is deposited in the access area over the target node in such a way to form simultaneously a conductive core and an immediately adjacent insulator. The conductive core is then used to couple a test signal between the target node and the conductive core. Other aspects of the disclosure include using a focused ion-beam system to provide varying concentrations of Gallium in forming simultaneously the conductive core and the immediately adjacent insulator. These aspects significantly lessen integrated circuit analysis and testing procedures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.