Method for selective etching of oxides
US6372657B1 · kind B1 · utility
146Cited by
2References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Sep 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved dry plasma cleaning process for the removal of native oxides, or other oxide films or growth residue, from openings formed in an insulating layer provided over a semiconductor substrate, without damaging the substrate or significantly affecting the critical dimension of the opening is disclosed. A mixture of nitrogen trifluoride (NF3), ammonia (NH3) and oxygen (O2) is first injected upstream into a microwave plasma source and is exited, and then the plasma is flowed downstream from the plasma source into a reaction chamber containing the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.