Real-time prediction of proximity resist heating and correction of raster scan electron beam lithography
US6373071B1 · kind B1 · utility
20Cited by
28References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 30, 1999 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Jun 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31769
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A shifted impulse response function is shown to give proximity heating results accurate to within a few percent. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.