Semiconductor structure having more usable substrate area and method for forming same
US6373123B1 · kind B1 · utility
10Cited by
4References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 10, 2000 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Jul 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a first substrate portion having a surface and a first active region disposed in the first substrate portion. An insulator region is disposed on the first substrate portion outside of the first active region and extends out from the surface. A second substrate portion is disposed on the insulator region, and a second active region is disposed in the second substrate portion. Thus, by disposing a portion of the substrate on the isolation region, the usable substrate area is dramatically increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.