Method of self-assembly silicon quantum dots
US6375737B2 · kind B2 · utility
10Cited by
1References
10Claims
0Family size
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Key dates
| Filing date | Apr 5, 2001 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Apr 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of self-assembling silicon quantum dots comprises the steps of providing a substrate, forming a thin amorphous Si film, and forming a plurality of Si quantum dots by controlling the energy and the shooting numbers of an excimer laser during an annealing process, wherein the excimer laser emits light on the thin amorphous Si film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.