Magnetic element with improved field response and fabricating method thereof
US6376260B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2001 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Apr 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved and novel fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14) , a second electrode (18) and a spacer layer (16). The first electrode (14) includes a fixed ferromagnetic layer (26) having a thickness t1. A second electrode (18) is included and comprises a free ferromagnetic layer (28) having a thickness t2. A spacer layer (16) is located between the fixed ferromagnetic layer (26) and the free ferromagnetic (28) layer, the spacer layer (16) having a thickness t3, where 0.25t3<t1<2t3, thereby producing near zero magnetic field at the free ferromagnetic layer (28).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.