Patent · US Expired

Method of forming a semiconductor device using double endpoint detection

US6376262B1 · kind B1 · utility

6Cited by

1References

24Claims

0Family size

Assignees

NATIONAL SEMICONDUCTOR CORPORATION · US
TOKYO ELECTRON LIMITED · JP

Inventors

Danielle Ki'ilani Kempa · Ogunquit, US
Sandra Hyland · Guilderland, US

Key dates

Filing date	May 31, 2001
Grant date	Apr 23, 2002
Priority date	—
Expiry date	May 31, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/021
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An optical endpoint system controls the overetching of a semiconductor device by using double optical endpoint detection. With a complex spacer, the system monitors the chemistry change at both the top TEOS/nitride interface and the bottom nitride/TEOS interface. This double optical endpoint method reduces the possibility of overetching the layers regardless of the variations in the thickness of the incoming film or the etching characteristics of the etch chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.