Effective retardation of fluorine radical attack on metal lines via use of silicon rich oxide spacers
US6376360B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Oct 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming metal structures, encapsulated in silicon rich oxide, (SRO), shapes and layers, needed to protect the metal structures from the corrosive effects of fluorine radicals, present in low k, fluorinated silica glass, (FSG), which in turn is formed in the spaces between metal structures, has been developed. The process features initial formation of the metal structures, capped with an overlying SRO shape. This is followed by the formation of SRO spacers on the sides of the SRO capped, metal structures. Another thin, conformal SRO layer is then deposited to insure encapsulation of the metal structures, however still leaving adequate space between the SRO encapsulated metal structures for the low k FSG layer, needed to limit capacitance and improve device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.