Plasma processing system
US6376796B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 19, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Dec 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B7/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system provided with a vacuum chamber for accommodating a substrate and for generation of plasma in a space in the front of the same, an antenna provided at the vacuum chamber, and a high frequency power source for supplying high frequency power to the antenna. The antenna emits high frequency power, generates plasma inside the vacuum chamber, and processes the surface of the substrate by the plasma. In the plasma processing system, the antenna has a disk-shaped conductor plate having a predetermined thickness. A coaxial waveguide having a folded portion is formed around the disk-shaped conductor plate. The folded portion of the waveguide is provided with a short-circuit 3 dB directional coupler having an impedance matching function. The antenna having the above structure prevents the generation of a standing wave in the high frequency wave propagation path from the high frequency power source to the vacuum chamber and generates high density plasma by supply of a large power. Due to this, processing of a large area substrate becomes possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.