Circuit edit interconnect structure through the backside of an integrated circuit die
US6376919B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Oct 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making circuit edit structures through the backside of a flip-chip packaged integrated circuit die. In one embodiment, a circuit edit is achieved by exposing first and second circuit edit connection targets through a semiconductor substrate of the integrated circuit die from the backside. Next, a polyimide layer is vapor deposited over the first and second circuit edit connection targets and the exposed semiconductor substrate. Next, the circuit edit connection targets are re-exposed through the polyimide layer and a conductor is deposited over the re-exposed circuit edit connection targets and the deposited polyimide layer from the backside of the integrated circuit to couple together the circuit edit connection targets. The polyimide layer may acts as both an insulation layer and an anti-reflective coating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.