Patent · US Expired

Method and apparatus for wafer detection

US6377060B1 · kind B1 · utility

36Cited by
15References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 18, 2000
Grant dateApr 23, 2002
Priority date
Expiry dateApr 18, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH02N13/00
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An apparatus and a method for detecting the presence and position of a wafer upon a semiconductor wafer support pedestal surface. Specifically, a wafer detector comprising a plurality of electrodes on a surface of the wafer support pedestal. The electrodes are coupled to a capacitance measurement circuit that measures the capacitance between the electrodes and generates a signal corresponding to a wafer's presence, location and chucking condition. The wafer's presence completes an electrical circuit between the electrodes, increasing the capacitance between the electrodes. As such, the presence of a wafer, the position of the wafer, and the condition of the wafer, i.e., wafer damage, can be detected upon a wafer support pedestal during wafer processing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.