Dual tox trench dram structures and process using V-groove

US6380027B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Toshiharu Furukawa · South Burlington, US
• Jeffrey P. Gambino · Gresham, US
• Edward W. Kiewra · Burlington, US
• Jack A. Mandelman · Stormville, US
• Carl Radens · Lagrangeville, US
• William R. Tonti · South Burlington, US
• Mary E. Weybright · Pleasant Valley, US

Key dates

• Filing date: Jan 4, 1999
• Grant date: Apr 30, 2002
• Expiry date: Jan 4, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/09

Abstract

A structure and method for simultaneously forming array structures and support structures on a substrate comprises forming the array structures to have a V-groove, forming the support structures to have a planar surface, and simultaneously forming a first oxide in the V-groove and a second oxide in the planar surface, wherein the first oxide is thicker than the second oxide.