Method of epitaxially growing a GaN semiconductor layer
US6380050B1 · kind B1 · utility
4Cited by
1References
6Claims
0Family size
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Key dates
| Filing date | Jul 14, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Jul 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02502
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growth of strain free epitaxial layers of semiconductors on highly lattice mismatched substrates is suggested using a buffer layer with a solid-liquid phase transition to accommodate high mismatch between substrate and semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.