Enhancement of nickel silicide formation by use of nickel pre-amorphizing implant
US6380057B1 · kind B1 · utility
13Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2001 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Feb 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Nickel salicide processing is implemented by implanting nickel into the active regions, prior to depositing Ni, to catalyze the reaction of Ni and Si during annealing to form a NiSi layer on the polysilicon gate electrodes and source/drain regions without the formation of rough interfaces between the nickel silicide layers and underlying silicon and without conductive bridging between the metal silicide layer on the gate electrode and the metal silicide layers on associated source/drain regions, particularly in the presence of silicon nitride sidewall spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.