Paul L. King
34Patents
13h-index
30Co-inventors
81Inventor score
Filing activity: Jun 9, 1978 → Mar 16, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6465334B1 | Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors | Electricity | 113 | Expired |
| US6475874B2 | Damascene NiSi metal gate high-k transistor | Electricity | 76 | Expired |
| US6300203A | Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistors | Electricity | 74 | Expired |
| US4679951A | Electronic keyboard system and method for reproducing selected symbolic language characters | Performing Operations; Transporting | 51 | Expired |
| US6630741B1 | Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed | Electricity | 47 | Expired |
| US6562718B1 | Process for forming fully silicided gates | Electricity | 39 | Expired |
| US6297107A | High dielectric constant materials as gate dielectrics | Electricity | 34 | Expired |
| US6368950B1 | Silicide gate transistors | Electricity | 30 | Expired |
| US6465309B1 | Silicide gate transistors | Electricity | 29 | Expired |
| US6602781B1 | Metal silicide gate transistors | Electricity | 19 | Expired |
| US6342414B1 | Damascene NiSi metal gate high-k transistor | Electricity | 15 | Expired |
| US6380057B1 | Enhancement of nickel silicide formation by use of nickel pre-amorphizing implant | Electricity | 13 | Expired |
| US6559051B1 | Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors | Electricity | 13 | Expired |
| US4399890A | Independently mounted fall prevention apparatus | Human Necessities | 11 | Expired |
| US6372644B1 | Hydrogen passivated silicon nitride spacers for reduced nickel silicide bridging | Electricity | 9 | Expired |
| US6717236B1 | Method of reducing electromigration by forming an electroplated copper-zinc interconnect and a semiconductor device thereby formed | Electricity | 9 | Expired |
| US6469387B1 | Semiconductor device formed by calcium doping a copper surface using a chemical solution | Electricity | 8 | Expired |
| US7755194B1 | Composite barrier layers with controlled copper interface surface roughness | Electricity | 8 | Active |
| US4181194A | Safety clamp device and apparatus utilizing same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6611576B1 | Automated control of metal thickness during film deposition | Physics | 6 | Expired |
| US6610181B1 | Method of controlling the formation of metal layers | Chemistry; Metallurgy | 6 | Expired |
| US6605513B2 | Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing | Electricity | 6 | Expired |
| US7033940B1 | Method of forming composite barrier layers with controlled copper interface surface roughness | Electricity | 5 | Expired |
| US7015076B1 | Selectable open circuit and anti-fuse element, and fabrication method therefor | Electricity | 5 | Expired |
| US6444580B1 | Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.