Metallizing process of semiconductor industry
US6380072B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Nov 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device having an excellent metallization is provided. The method includes the steps of a). providing a semiconductor substrate, b) forming a conductive layer on the semiconductor substrate, c) forming a dielectric layer on the conductive layer, d) forming a titanium nitride layer directly on the dielectric layer without contacting the conductive layer, and e) patternizing the titanium nitride layer, the dielectric layer and the conductive layer, wherein the dielectric layer is used for avoiding spontaneous electrochemical reaction between the titanium nitride layer and the conductive layer,
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.