Silicon trench etch using silicon-containing precursors to reduce or avoid mask erosion
US6380095B1 · kind B1 · utility
29Cited by
21References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Nov 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention pertains to an etch chemistry and method useful for the etching of silicon surfaces. The method is particularly useful in the deep trench etching of silicon where profile control is important. In the case of deep trench etching, at least a portion of the substrate toward the bottom of the trench is etched using a combination of reactive gases including a fluorine-containing compound which does not contain silicon (FC); a silicon-containing compound (SC) which does not contain fluorine; and oxygen (O2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.