Inventor · Espoo, FI

Wei Liu

64Patents
15h-index
137Co-inventors
87Inventor score

Filing activity: Aug 10, 1999 → Apr 20, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6924191B2 Method for fabricating a gate structure of a field effect transistor Electricity 409 Expired
US6235643A Method for etching a trench having rounded top and bottom corners in a silicon substrate Electricity 270 Expired
US6677242B1 Integrated shallow trench isolation approach Electricity 236 Expired
US7064078B2 Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme Electricity 76 Expired
US6960416B2 Method and apparatus for controlling etch processes during fabrication of semiconductor devices Electricity 46 Expired
US8999106B2 Apparatus and method for controlling edge performance in an inductively coupled plasma chamber Electricity 41 Active
US6180533A Method for etching a trench having rounded top corners in a silicon substrate Electricity 31 Expired
US8137463B2 Dual zone gas injection nozzle Electricity 29 Active
US6380095B1 Silicon trench etch using silicon-containing precursors to reduce or avoid mask erosion Electricity 29 Expired
US7094613B2 Method for controlling accuracy and repeatability of an etch process Electricity 21 Expired
US6911399B2 Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition Electricity 20 Expired
US6858361B2 Methodology for repeatable post etch CD in a production tool Electricity 19 Expired
US6767824B2 Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask Emerging Cross-Sectional Technologies 19 Expired
US6491835B1 Metal mask etching of silicon Electricity 16 Expired
US7718081B2 Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes Electricity 15 Active
US6458671B1 Method of providing a shallow trench in a deep-trench device Electricity 14 Expired
US6566270B1 Integration of silicon etch and chamber cleaning processes Electricity 12 Expired
USD1034491S1 Edge ring General 11 Active
US6924088B2 Method and system for realtime CD microloading control Emerging Cross-Sectional Technologies 11 Expired
US7498106B2 Method and apparatus for controlling etch processes during fabrication of semiconductor devices Electricity 10 Active
US6589879B2 Nitride open etch process based on trifluoromethane and sulfur hexafluoride Electricity 9 Expired
US7482178B2 Chamber stability monitoring using an integrated metrology tool Electricity 7 Expired
US8481433B2 Methods and apparatus for forming nitrogen-containing layers Electricity 6 Active
US7262865B2 Method and apparatus for controlling a calibration cycle or a metrology tool Electricity 5 Expired
US7368394B2 Etch methods to form anisotropic features for high aspect ratio applications Electricity 5 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.