Method and system for identifying etch end points in semiconductor circuit fabrication
US6381008B1 · kind B1 · utility
61Cited by
4References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 1999 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | May 25, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J3/0229
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is a spectrometer system with unique wavelength resolution improving relative positioning of diffraction grating and detector. Also disclosed is a modified evolving windowed factor analysis based method of detecting semiconductor etch end points which is particularly well suited for use in real time monitoring and process control. Use of wavelength group selecting mask filters is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.