Very narrow band injection seeded F2 lithography laser
US6381257B1 · kind B1 · utility
59Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1999 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Dec 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/2333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A tunable injection seeded very narrow band F2 lithography laser. The laser combines modular design features of prior art long life reliable lithography lasers with special techniques to produce a seed beam operated in a first gain medium which beam is used to stimulate narrow band lasing in a second gain medium to produce a very narrow band laser beam useful for integrated circuit lithography. In a preferred embodiment, two tunable etalon output couplers are used to narrow band an F2 laser and the output of the seed laser is amplified in an F2 amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.