Method for forming thin films
US6383346B2 · kind B2 · utility
4Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1997 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Mar 21, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0057
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method for forming a film of aluminum oxide in which a target containing aluminum is sputtered in a gas containing fluorine atoms.The thin film of aluminum oxide according to the present invention has little optical absorption and high refractive index in the ultraviolet and vacuum ultraviolet regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.