Semiconductor device and process
US6383821B1 · kind B1 · utility
9Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1999 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Oct 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for manufacturing a semiconductor device includes the formation of tungsten contact plugs suitable for very small geometry devices. As part of the process a tungsten barrier layer is deposited into vias and covering the walls of the vias by a process of ionized metal plasma deposition. The tungsten layer deposited in this manner provides a barrier layer, adhesion layer, and nucleation layer for the subsequent chemical vapor deposition of tungsten contact plug material. Together the two layers of tungsten form contact plugs having a low resistance even when used in the fabrication of very small geometry devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.