Micropatterning method
US6383944B1 · kind B1 · utility
11Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1999 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Oct 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By forming a lift-off resist pattern on a surface of a first layer, forming a second layer over the first layer surface including the resist pattern, removing the resist pattern to partially expose the first layer surface, and etching the exposed area of the first layer, a micropattern having a high resolution of 0.3 &mgr;m or less and improved dimensional control is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.