Capacitor and method for forming same

US6384468B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kerry Bernstein · Underhill, US
• Nicholas Theodore Schmidt · Colchester, US
• Anthony K. Stamper · Williston, US
• Stephen A. St. Onge · Colchester, US
• Steven H. Voldman · South Burlington, US

Key dates

• Filing date: Feb 7, 2000
• Grant date: May 7, 2002
• Expiry date: Feb 7, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An integrated circuit interconnect level capacitor is disclosed. In an exemplary embodiment, the capacitor includes a first insulator layer overlying an interconnect level surface of a semiconductor substrate having active devices. First and second conductive lines are provided in the first insulator layer and are separated by a trench defined by the first insulator layer and by sidewalls of the first and second conductive lines. A first conductive barrier layer overlies and connects the first and second conductive lines, and a second insulator layer overlies the first conductive barrier layer. A second conductive barrier layer overlies the second insulator layer, and a third conductive line is disposed in the trench and overlies the second conductive barrier layer.