Reference signal generation for magnetic random access memory devices
US6385111B2 · kind B2 · utility
61Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2001 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Mar 14, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Magnetic Random Access Memory (“MRAM”) device includes an array of memory cells. The device generates reference signals that can be used to determine the resistance states of each memory cell in the array, despite variations in resistance due to manufacturing tolerances and other factors such as temperature gradients across the array, electromagnetic interference and aging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.