Process for mechanical chemical polishing of layer of aluminium or aluminium alloy conducting material
US6386950B1 · kind B1 · utility
4Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2000 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Feb 17, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Process for mechanical chemical polishing of a layer of an aluminium or aluminium alloy conducting material used in the microelectronics semi-conductors industry in which said aluminium or aluminium alloy layer is abraded using an abrasive composition which comprises an alkaline aqueous suspension of individualized colloidal silica particles not linked to each other by siloxane bonds, a tetraalkylammonium hydroxide and an oxidizing agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.