Integration of remote plasma generator with semiconductor processing chamber
US6387207B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2000 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Apr 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32458
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A compact, self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to form an integrated substrate processing system. The remote plasma generator is activated in a clean operation to generate cleaning plasma species to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes. A three-way valve is adjustable to control gas flow to the chamber. During the clean operation, the three-way valve directs a cleaning plasma precursor from a first gas line to the remote plasma generator to generate cleaning plasma species which are flowed to the chamber for cleaning deposits therein. During a deposition process, the three-way valve directs a first process gas from the flat gas line to the chamber, bypassing the remote plasma generator. The first process gas is typically mixed with a second process gas supplied from a second gas line in a mixing device prior to entering the chamber for depositing a layer on a substrate disposed therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.