Integrated circuit defect detection via laser heat and IR thermography

US6387715B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Brennan V. Davis · Austin, US
• Rama R. Goruganthu · Austin, US
• Jeffrey D. Birdsley · Austin, US
• Michael R. Bruce · Austin, US
• Rosalinda M. Ring · Austin, US

Key dates

• Filing date: Sep 30, 1999
• Grant date: May 14, 2002
• Expiry date: Sep 30, 2019

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N25/72
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Defect detection for post-manufacturing analysis of an integrated circuit die is enhanced via a method and system that use IR thermography to detect defects in circuitry within the die. According to an example embodiment of the present invention, substrate is removed from an integrated circuit die and a target region is exposed. A portion of the target region is heated with an infrared (IR) laser beam, and the die is imaged using IR thermography. The image is compared with a reference image, and damage to the integrated circuit is detected therefrom.