Waveguide structures integrated with standard CMOS circuitry and methods for making the same
US6387720B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1999 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Dec 14, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A waveguide structure and method of making a waveguide for communicating optical signals is provided. The waveguide structure is made using standard CMOS fabrication operations and is integrated on the same chip having digital CMOS circuitry. An example method of making the waveguide includes forming a contact through a dielectric layer down to a substrate and coating sidewalls of the contact with a first metallization coating. The contact is then filled with a dielectric material. A partial waveguide structure is formed over the first metallization coating and the dielectric material of the contact. The partial waveguide structure is defined by a waveguide dielectric structure and a second metallization coating that is defined over the waveguide dielectric structure. A third metallization coating is then formed to define spacers along sides of the partial waveguide structure, the first metallization coating, the second metallization coating. The third metallization coating is configured to complete the waveguide structure that is filled with the waveguide dielectric structure. Optical signals can then be propagated through the waveguide structure and can be interfaced with other C…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.