BC13/AR chemistry for metal overetching on a high density plasma etcher
US6387820B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2000 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Nov 17, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device by forming layers of materials on a semiconductor substrate and utilizing a series of etch chemistries to remove portions of the layers of materials to form a metal stack. A patterned layer of photoresist determines the portions of the layers that will be etched. An etch process etches a hardmask material, a breakthrough etch process etches an antireflection layer, a conventional main etch process etches approximately 80 percent of the metal film, a first overetch process for a first selected period of time and a second overetch process for a second selected period of time provides a metal film stack having straight profiles and smooth sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.