Method for growing thin silicon oxides on a silicon substrate using chlorine precursors

US6387827B1 · kind B1 · utility

Assignees

• IMEC VZW · BE
• ASM International N.V. · NL
• Olin Corporation · US

Inventors

• Paul Mertens · Haacht, BE
• Michael J. McGeary · Meriden, US
• Hessel Sprey · Kessel-Lo, BE
• Karine Kenis · Kessel-Lo, BE
• Marc Schaekers · Leuven, BE
• Marc Heyns · Linden, BE

Key dates

• Filing date: Nov 26, 1997
• Grant date: May 14, 2002
• Expiry date: Nov 26, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02255
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of growing a silicon oxide layer on a silicon substrate by means of a thermal oxidation in a furnace in the presence of a gaseous mixture, said mixture comprising oxygen and Cl2, said Cl2 being generated by an organic chlorine-carbon source, particularly oxalyl chloride. This method is directed to the growth of (ultra) thin silicon oxides and/or the cleaning of a substrate using a low oxidation power. Consequently the method disclosed is especially suited for temperature below 700° C. and for oxidation ambients containing only small amounts of oxygen.