Method of determining a trap density of a semiconductor/oxide interface by a contactless charge technique
US6391668B1 · kind B1 · utility
8Cited by
8References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | May 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of determining a trap density of a semiconductor substrate/dielectric interface. In one embodiment, the method comprises measuring a current within a semiconductor substrate resulting from a flow of carriers from traps located near the interface, wherein the measured current is a function of the number of traps located at the interface, and determining the trap density as a function of the measured current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.