Transient suppressing device and method
US6392266B1 · kind B1 · utility
19Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2001 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Jan 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
Abstract
A method is provided for suppressing a transient signal (VTR) using a single semiconductor die (130). The method comprises the step of loading the transient signal with first and second junctions (110, 112) formed adjacent to a first doped region (140) of the semiconductor die. The first junction breaks down to generate a current while the second junction forward biases to route the current across an undepleted portion (161) of the first doped region and through the second junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.