Rapid thermal processing method and apparatus
US6393210B1 · kind B1 · utility
18Cited by
14References
16Claims
0Family size
Assignees
Inventor
Key dates
| Filing date | Dec 21, 1999 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Dec 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for the rapid thermal processing of a semiconductor wafer is disclosed. The apparatus includes a preheat unit for preheating a gas composition, and a RTP reactor having a processing chamber and a heat source for heating the wafer. The processing chamber has a wafer holder, and a gas inlet and a gas outlet through which the preheated gas composition flows in and out of the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.