Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
US6395194B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 18, 1998 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Dec 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method of removing noble metal material from a substrate having the noble metal material deposited thereon, such as a semiconductor device structure including thereon a layer of the noble metal material, e.g., iridium, patterned for use as an electrode. The substrate is subjected to chemical mechanical polishing with a chemical mechanical polishing composition containing abrasive polishing particles and a halide-based oxidizing agent. The CMP composition and method of the invention provide efficient planarization and noble metal material removal from the substrate, in applications such as the fabrication of ferroelectric or high permittivity capacitor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.