Programming of nonvolatile memory cells
US6396741B1 · kind B1 · utility
110Cited by
40References
43Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 4, 2000 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | May 4, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3468
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming an NROM cell which includes the steps of applying a drain, a source and a gate voltage to the cell and verifying a programmed of a non-programmed state of the cell. If the cell is in the non-programmed state, the method includes the steps of increasing the drain voltage and maintaining the gate voltage at a constant level during at least a part of the step of increasing. The steeps of applying, verifying, increasing and maintaining are repeated until the cell reaches the programmed state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.