LED with spreading layer
US6396862B1 · kind B1 · utility
3Cited by
12References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1999 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Dec 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/816
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device has a window layer (8), a current spreading layer (7) below the window layer and a cladding layer (6) below the current spreading layer. The band gap energy of the spreading layer is higher than that of the window layer and lower than that of the cladding layer and the carrier concentration of the spreading layer is lower than that of the window layer and higher than that of the cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.