Ruthenium silicide processing methods
US6399492B1 · kind B1 · utility
10Cited by
13References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2001 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Mar 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes methods of processing ruthenium silicide. In one implementation, a ruthenium silicide processing method sequentially includes forming ruthenium silicide over front and back sides of a semiconductor substrate. The backside ruthenium silicide is exposed to a chlorine and fluorine containing aqueous solution effective to remove at least some ruthenium silicide therefrom. Then, the substrate backside is exposed to an aqueous ruthenium oxide etchant solution. Then, the substrate backside is exposed to an aqueous hydrofluoric acid containing solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.