Interferometric method for endpointing plasma etch processes
US6400458B1 · kind B1 · utility
8Cited by
21References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 30, 1999 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Sep 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for monitoring a device fabrication process. The method includes etching into a wafer disposed inside a chamber and detecting the intensity of a portion of a light reflected from a surface of the wafer and further scattered at a scattering inside surface of the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.