Single-substrate-treating apparatus for semiconductor processing system
US6402848B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Apr 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In an annealing apparatus for processing semiconductor wafers one by one, a hermetic process chamber has a work table having an upper surface on which a wafer is placed. A shower head is disposed to supply a process gas into the process chamber from a position opposing the upper surface of the work table. An exhaust chamber is connected to the bottom portion of the process chamber through an inlet opening below the work table. The inlet opening has a planar contour smaller than that of the work table. The planar contours of the work table and the opening are arranged almost concentrically with each other. An exhaust mechanism is connected to the exhaust chamber, so the process chamber is exhausted through the exhaust chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.